DEPENDENCE OF LINEWIDTH ENHANCEMENT FACTOR ON CRYSTAL ORIENTATION IN STRAINED-QUANTUM-WELL LASERS

Authors
OHTOSHI T KURODA T NIWA A TSUJI S
Citation
T. Ohtoshi et al., DEPENDENCE OF LINEWIDTH ENHANCEMENT FACTOR ON CRYSTAL ORIENTATION IN STRAINED-QUANTUM-WELL LASERS, IEEE photonics technology letters, 6(12), 1994, pp. 1424-1426
Citations number
18
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
12
Year of publication
1994
Pages
1424 - 1426
Database
ISI
SICI code
1041-1135(1994)6:12<1424:DOLEFO>2.0.ZU;2-F
Abstract
The linewidth enhancement factor a in strained quantum well (QW) laser s is estimated theoretically for various crystallographic directions, It is found that the a factor in a strained In0.7Ga0.3As-InP QW laser on a (111) substrate is less than 1.4, much lower than for conventiona l strained QW lasers on (001) substrates.