EFFECT OF ANNEALING AND HYDROGENATION ON NEUTRON-TRANSMUTATION-DOPED GAAS

Photoluminescence and photoreflectance measurements are carried out in order to investigate the effects of annealing and hydrogenation on th e defect levels of neutron-transmutation-doped (NTD) GaAs. The damage to the crystallinity of NTD GaAs is recovered by annealing, and the de fects in the annealed NTD GaAs are compensated for by hydrogen atoms a fter hydrogenation. Since the transmutation-doped impurities in GaAs a re compensated for by the injection of hydrogen atoms, Franz-Keldysh o scillations appear due to the large variation in the surface electric field.