DLTS STUDY OF A SEEDED PHYSICAL VAPOR TRANSPORT ZNSE SCHOTTKY DIODE

Authors
MARKEY BG MCKEEVER SWS CANTWELL G
Citation
Bg. Markey et al., DLTS STUDY OF A SEEDED PHYSICAL VAPOR TRANSPORT ZNSE SCHOTTKY DIODE, Physica status solidi. a, Applied research, 146(2), 1994, pp. 735-743
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
146
Issue
2
Year of publication
1994
Pages
735 - 743
Database
ISI
SICI code
0031-8965(1994)146:2<735:DSOASP>2.0.ZU;2-W
Abstract
Deep level characterization of a ZnSe Schottky diode grown by the seed ed physical vapor transport (SPVT) method is presented for the first t ime. Deep level transient spectroscopy (DLTS) measurements reveal a de ep electron trapping level with an activation energy of(0.34 +/- 0.01) eV and a concentration of 1.01 x 10(12) cm(-3). Through the use of sh ort fill pulses and curve fitting, several lower concentration peaks a re also characterized. These are found to have concentrations on the o rder of 10(10) to 10(11) cm(-3) and activation energies ranging from 0 .096 to 0.383 eV.