DEFECT STATES IN SI CONTAINING DISLOCATION NETS

Dc conductivity, Hall effect, and photoluminescence spectra are studie d in heavily deformed samples containing a connected system of disloca tion cell walls. The conclusion is made that, in deformed Si, empty an d filled electron states 0.3 to 0.4 eV from the upper and lower edges of the band gap, respectively, are related to dislocation defects (kin ks, jogs, constrictions, etc.). As a result, the Fermi level is pinned in the vicinity of localized stales near the middle of the band gap. Therefore, de conductivity along the dislocation system is absent.