CATHODIC DEPOSITION OF TERNARY IN-X(AS+SB ALLOYS AND FORMATION OF INASXSB1)

Citation
S. Cattarin et al., CATHODIC DEPOSITION OF TERNARY IN-X(AS+SB ALLOYS AND FORMATION OF INASXSB1), Journal of electroanalytical chemistry [1992], 380(1-2), 1995, pp. 209-218
Citations number
39
Categorie Soggetti
Electrochemistry,"Chemistry Analytical
Journal title
Journal of electroanalytical chemistry [1992]
ISSN journal
15726657 → ACNP
Volume
380
Issue
1-2
Year of publication
1995
Pages
209 - 218
Database
ISI
SICI code
Abstract
In + As + Sb alloys have been deposited onto Ni and Ti cathodes from t artaric acid solutions at pH 2. Homogeneous deposits of composition su itable for achieving InAsxSb1-x can be obtained from this medium. The As-to-Sb ratio can be controlled by properly selecting solution compos ition and deposition potential. X-ray photoelectron spectroscopy and X -ray diffraction analyses show that formation of III-V compounds occur s at room temperature. In reacts preferentially with As rather than wi th Sb, but crystalline phases formed at room temperature are Sb-rich. After annealing the In + As + Sb alloys at 250 degrees C, the composit ion calculated from cell parameters appears similar to that measured b y energy-dispersive X-ray analysis, suggesting that the entire deposit has been converted into the InAsxSb1-x crystalline phase.