S. Cattarin et al., CATHODIC DEPOSITION OF TERNARY IN-X(AS+SB ALLOYS AND FORMATION OF INASXSB1), Journal of electroanalytical chemistry [1992], 380(1-2), 1995, pp. 209-218
In + As + Sb alloys have been deposited onto Ni and Ti cathodes from t
artaric acid solutions at pH 2. Homogeneous deposits of composition su
itable for achieving InAsxSb1-x can be obtained from this medium. The
As-to-Sb ratio can be controlled by properly selecting solution compos
ition and deposition potential. X-ray photoelectron spectroscopy and X
-ray diffraction analyses show that formation of III-V compounds occur
s at room temperature. In reacts preferentially with As rather than wi
th Sb, but crystalline phases formed at room temperature are Sb-rich.
After annealing the In + As + Sb alloys at 250 degrees C, the composit
ion calculated from cell parameters appears similar to that measured b
y energy-dispersive X-ray analysis, suggesting that the entire deposit
has been converted into the InAsxSb1-x crystalline phase.