EVIDENCE FOR SB ASSOCIATED WITH MULTI-HYDROGEN IN N-TYPE SILICON

The formation of Sb-H complexes in n-type Si after the induction of H by low-energy implantation has been investigated using Sb-119 --> Sn-1 19 source Mossbauer spectroscopy. We have studied the different Mossba uer fractions as a function of H- and Sb-dose and as a function of H-i mplantation temperature. We can explain our results by assuming therma l equilibrium between Sb-H complexes and clustered H-2() pairs, attri buting the visible hydrogen associated fraction to SbH and the ''invis ible fraction to SbH2 complexes. The results show that the binding ene rgy of hydrogen in these three forms differ only by about 0.1 eV, bein g the highest for H-2() and the lowest for SbH.