ROOM-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION OF HIGH-QUALITY TIN

Authors
BOUMERZOUG M PANG ZD BOUDREAU M MASCHER P SIMMONS JG
Citation
M. Boumerzoug et al., ROOM-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION OF HIGH-QUALITY TIN, Applied physics letters, 66(3), 1995, pp. 302-304
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
3
Year of publication
1995
Pages
302 - 304
Database
ISI
SICI code
0003-6951(1995)66:3<302:REC>2.0.ZU;2-G