DUAL LATERAL CHANNEL EMITTER SWITCHED THYRISTOR CHARACTERISTICS - DEPENDENCE ON FLOATING EMITTER LENGTH

In this work, we have examined the forward drop and maximum controllab le current of the Dual Lateral Channel Emitter Switched Thyristor as a function of floating emitter length. It is found that the forward dro p at lower current densities decreases with increasing floating emitte r length, but the trend is reversed at higher current densities. The m aximum controllable current is found to decrease with increasing emitt er length, and increase with applied negative gate bias. This indicate s that turnoff is primarily accomplished by the p-channel MOSFET inher ent in the structure. These trends have been verified experimentally o n 600-V devices.