NEGATIVE DIFFERENTIAL RESISTANCE OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - INFLUENCE OF EMITTER EDGE CURRENT/

Authors
WALDROP JR CHANG MF
Citation
Jr. Waldrop et Mf. Chang, NEGATIVE DIFFERENTIAL RESISTANCE OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - INFLUENCE OF EMITTER EDGE CURRENT/, IEEE electron device letters, 16(1), 1995, pp. 8-10
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
16
Issue
1
Year of publication
1995
Pages
8 - 10
Database
ISI
SICI code
0741-3106(1995)16:1<8:NDROAG>2.0.ZU;2-S
Abstract
We report an electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors over a temperature range of 250 to 400 K in which the emitter edge current contribution to the negative differential ou tput resistance (NDR) effect is determined. A quantitative analysis of the dc gain versus temperature and perimeter to area ratio indicates that emitter edge has a major influence on the NDR magnitude.