Jr. Waldrop et Mf. Chang, NEGATIVE DIFFERENTIAL RESISTANCE OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - INFLUENCE OF EMITTER EDGE CURRENT/, IEEE electron device letters, 16(1), 1995, pp. 8-10
We report an electrical characterization of AlGaAs/GaAs heterojunction
bipolar transistors over a temperature range of 250 to 400 K in which
the emitter edge current contribution to the negative differential ou
tput resistance (NDR) effect is determined. A quantitative analysis of
the dc gain versus temperature and perimeter to area ratio indicates
that emitter edge has a major influence on the NDR magnitude.