FORMATION AND CONTROL OF BORON BURIED LAYERS IN SILICON USING AN EXCIMER-LASER

Buried layers have been shown to enhance performance of Si MOSFET's in the deep submicrometer regime. Epitaxial growth methods such as atomi c layer doping or ion implantation are currently used for the formatio n of such doping profiles. In this letter, we propose an alternative a pproach, using a XeCI (lambda=308 nn) pulsed excimer laser, for the fa brication of pulse-shaped B profiles in Si. This process affords simpl icity, versatility, and independent control over the depth, width, and the height of the B buried layer.