THE EXTRACTION OF 2-DIMENSIONAL MOS-TRANSISTOR DOPING VIA INVERSE MODELING

We present a novel method for the determination of the two-dimensional (2D) doping profile of a MOSFET using inverse modeling. In our method , the logarithms of the donors and accepters concentrations are each r epresented by a tenser product spline (TPS). The TPS coefficients are extracted by nonlinear, least squares optimization from source/drain ( S/D) diode and gate capacitance data. After validating the method by a pplying it to simulated capacitance data, we present the results of us ing the new technique to extract the 2D profile of a 0.42 mu m gate le ngth CMOS technology N-channel device.