THE EFFECTS OF ELECTROCHEMICALLY-INDUCED ETCHING NONUNIFORMITIES ON MICROWAVE FIELD-EFFECT TRANSISTORS

For the first time, direct experimental evidence of the electrochemica l etching component, associated with wet chemical etching of semicondu ctor devices, is shown to produce significant non-uniformities in devi ce (e.g,, material) characteristics. Furthermore, it is shown that the se electrochemically-induced non-uniformities (within the device itsel f) can significantly reduce RP performance of power microwave devices. Comparative microwave measurements between discrete power devices tha t had, or did not have, electrochemically-induced non-uniformities, cl early demonstrated marked differences in device power-added-efficiency (PAE).