FORMULATION OF A TAIL ELECTRON HYDRODYNAMIC MODEL-BASED ON MONTE-CARLO RESULTS

In this paper, the Monte Carlo method is applied to uniform and n(+) - n(-) - n(+) structures of silicon to study the behavior of tail elect rons and to develop a new set of hydrodynamic equations based on tail electron statistics. Each term in these equations is calibrated under both nonhomogeneous and homogeneous electric fields. Terms associated with surface integral of the carriers and carrier momentum over an iso energy surface (E = E(th)) are introduced. The new tail electron hydr odynamic model yields the density (n(2)) and the average energy (w(2)) of tail electrons and is shown to predict hot electron effects accura tely.