RECESS DEPENDENT BREAKDOWN BEHAVIOR OF GAAS-HFETS

GaAs based HEMT devices were fabricated with 700 a constant recess tow ards the source, whereas the recess width towards the drain was varied . While the off-state breakdown voltage has been improved by the use o f a wide recess towards the drain, no dependence of the on-state break down on the recess configuration was observed. The constant breakdown voltage in 500 the on-state is analysed by the feedback parameters obt ained from an extraction of the small signal equivalent circuit. Altho ugh the extrinsic gate drain capacitance could be reduced by the use o f a wider recess configuration, it is assumed that the intrinsic drift region is independent of the recess configuration.