STATIC AND DYNAMICAL PROPERTIES OF DISPERSIVE OPTICAL BISTABILITY IN SEMICONDUCTOR-LASERS

Static and dynamic properties of dispersive optical bistability (OB) i n semiconductor lasers biased from below to above threshold has been i nvestigated both theoretically and experimentally. The OB result is fo und to be varied continuously from below to above threshold; Although conventionally the OB switch-off time in dispersive semiconductor lase r amplifiers is limited by the effective carrier lifetime, a much fast er OB switch-off can be obtained when a laser diode operates well abov e threshold in the injection-locked condition.