CHEMICALLY ENHANCED SPUTTERING IN FLUORINE-CONTAINING PLASMAS - APPLICATION TO TUNGSTEN OXYFLUORIDE

Authors
AZENS A STJERNA B GRANQVIST CG
Citation
A. Azens et al., CHEMICALLY ENHANCED SPUTTERING IN FLUORINE-CONTAINING PLASMAS - APPLICATION TO TUNGSTEN OXYFLUORIDE, Thin solid films, 254(1-2), 1995, pp. 1-2
Citations number
15
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
254
Issue
1-2
Year of publication
1995
Pages
1 - 2
Database
ISI
SICI code
0040-6090(1995)254:1-2<1:CESIFP>2.0.ZU;2-7
Abstract
Tungsten oxyfluoride films were prepared by reactive d.c. magnetron sp uttering in plasmas containing O-2 + CF4. Physical and chemical effect s on the sputter rate were elucidated by changing the temperature of t he sputter target. Elevated target temperatures yielded strongly enhan ced rates, proving that chemical effects can be strong.