(BA0.5,SR0.5)TIO3, THIN-FILM PREPARATION BY RF MAGNETRON SPUTTERING AND ITS ELECTRIC PROPERTIES

(Ba-0.5, Sr-0.5)TiO3 thin films were prepared by r.f. magnetron sputte ring. Films of 200 nm thickness were deposited on Pt/Ti/SiO2/Si substr ates at a substrate temperature of 500 degrees C. A Rutherford backsca ttering spectroscopy and Auger electron spectroscopy study showed that the films have stoichiometric composition. These films exhibited good surface morphology, a dielectric constant of 320, a dissipation facto r of 0.02 at 100 kHz, a leakage current density of 0.8 mu A cm(-2), an d a charge storage density of 40 fC mu m(-2) at an applied electric fi eld of 0.15 MV cm(-1).