FERROMAGNETIC-RESONANCE IN NI FILMS PRODUCED BY BIASED DC SPUTTER-DEPOSITION ONTO SIO2 AND SI(100)

Ferromagnetic resonance measurements at the X-band were taken at room temperature mainly to investigate the mechanical properties of Ni film s 180 nm thick prepared on both pure and SiO2-covered Si(100) substrat es at 190 degrees C by biased d.c. plasma sputter deposition at 2.5 kV in Ar gas. A negative bias voltage V-s between 0 V and -80 V was appl ied to the substrates during deposition. The homogeneous intrinsic str ess sigma(i) induced in the films is compressive (sigma(i) < 0). The m agnitude of sigma(i) depends on V-s. For the Ni/SiO2 system -sigma(i); has a maximum as V-s reaches about -30 V because the impurities are m ost strongly embedded in the film with incoming Ar particles. When -V- s is over 30 V the more energetic Ar particles contribute to a decreas e in -sigma(i), through resputtering the impurities. For the Ni/Si sys tem -sigma(i) only increases monotonically with V-s, mainly owing to t he peening effect. The anisotropic planar stress sigma(u) which is muc h smaller in magnitude than sigma(i) is also induced in the film for b oth systems. The origin of sigma(u) is not understood at present. Thus , the g-factor varies with V-s,mainly in agreement with the dependence of sigma(i) on V-s for both systems.