NEW FULL-VOLTAGE-SWING MULTI-DRAIN MULTI-COLLECTOR COMPLEMENTARY BICMOS BUFFERS (M(2) CBICMOS)/

Authors
ELHADY M ELSAID MH HAFEZ IM HADDARA H
Citation
M. Elhady et al., NEW FULL-VOLTAGE-SWING MULTI-DRAIN MULTI-COLLECTOR COMPLEMENTARY BICMOS BUFFERS (M(2) CBICMOS)/, Solid-state electronics, 38(1), 1995, pp. 211-216
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
1
Year of publication
1995
Pages
211 - 216
Database
ISI
SICI code
0038-1101(1995)38:1<211:NFMMCB>2.0.ZU;2-F
Abstract
In this short paper we introduce new complementary BiCMOS buffers empl oying multi-drain/multi-collector structures. These circuits offer nea r rail-to-rail output voltage, less circuit complexity, less process c omplexity, and high performance at scaled down power supply voltages ( <2 V). The new circuits are configured in a way that ensures the imple mented pnp BJTs (even poor ones) do not appreciably affect the speed p erformance. The introduced circuits are simulated and compared to conv entional BiCMOS and CBiCMOS buffers.