INVERSE GROWTH-KINETICS ON INSB(110)

Using He atom scattering, layer-by-layer erosion of InSb(110) by low e nergy ion bombardment has been observed to proceed via nucleation of v acancy islands, island growth and coalescence. The mechanism is in ful l agreement with theoretical models developed for crystal growth, with diffusing adatoms substituted by diffusing vacancies. In particular i t has been observed that coalescence of the vacancy islands sets in af ter the removal of small fractions of a monolayer and that the average terrace width increases with number of sputtered monolayers.