ENHANCEMENT OF DEEP ACCEPTOR ACTIVATION IN SEMICONDUCTORS BY SUPERLATTICE DOPING

Authors
SCHUBERT EF GRIESHABER W GOEPFERT ID
Citation
Ef. Schubert et al., ENHANCEMENT OF DEEP ACCEPTOR ACTIVATION IN SEMICONDUCTORS BY SUPERLATTICE DOPING, Applied physics letters, 69(24), 1996, pp. 3737-3739
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
24
Year of publication
1996
Pages
3737 - 3739
Database
ISI
SICI code
0003-6951(1996)69:24<3737:EODAAI>2.0.ZU;2-N
Abstract
The thermal activation of accepters in wide-gap semiconductors can be very low due to large acceptor activation energies. It is shown that s uperlattice doping, i.e., the composition modulation of a uniformly do ped ternary semiconductor, can enhance the acceptor activation by more than one order of magnitude. (C) 1996 American Institute of Physics.