Ef. Schubert et al., ENHANCEMENT OF DEEP ACCEPTOR ACTIVATION IN SEMICONDUCTORS BY SUPERLATTICE DOPING, Applied physics letters, 69(24), 1996, pp. 3737-3739
The thermal activation of accepters in wide-gap semiconductors can be
very low due to large acceptor activation energies. It is shown that s
uperlattice doping, i.e., the composition modulation of a uniformly do
ped ternary semiconductor, can enhance the acceptor activation by more
than one order of magnitude. (C) 1996 American Institute of Physics.