HIGH CARRIER DENSITY AND MOBILITY IN GAAS INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURES/

Authors
KAO MJ HSU WC SHIEH HM LIU WC CHANG CY
Citation
Mj. Kao et al., HIGH CARRIER DENSITY AND MOBILITY IN GAAS INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURES/, JPN J A P 2, 34(1A), 1995, pp. 1-3
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Issue
1A
Year of publication
1995
Pages
1 - 3
Database
ISI
SICI code
Abstract
Double-quantum-well GaAs/InGaAs/GaAs pseudomorphic heterostructures by delta-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 10(13) cm-2 along with a n enhanced mobility of 2100 cm2/V.s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.