CHEMICAL-VAPOR-DEPOSITION TECHNIQUES OF AL FOR DIRECT GROWTH ON OXIDIZED SI AND HIGH-SPEED GROWTH

This paper reports two novel Al-chemical vapor deposition (CVD) techni ques for direct growth on SiO2 and high-speed growth. Blanket growth o n SiO2 was achieved by using dimethylethylamine alane (DMEAA) as a pre cursor. Growth at 220-degrees-C following seeding at 300-degrees-C yie lds relatively smooth surfaces and resistivities of 3.3 muOMEGA.cm. Se lective filling of via holes and nonselective blanket growth were cont inuously performed by changing precursors from dimethylaluminum hydrid e (DMAH) to DMEAA during growth. High-speed growth was achieved by ado pting the liquid-transport method. A growth rate of 0.7 mum/min was ob tained for DMAH with growth selectivity being maintained.