USE OF GE HOT-HOLE SUBMILLIMETER LASERS FOR METRICS OF NARROW-GAP SEMICONDUCTORS

Authors
VOROBEV LE DANILOV SN DONETSKII DV KOCHEGAROV YV FIRSOV DA
Citation
Le. Vorobev et al., USE OF GE HOT-HOLE SUBMILLIMETER LASERS FOR METRICS OF NARROW-GAP SEMICONDUCTORS, Russian journal of nondestructive testing, 32(1), 1996, pp. 40-43
Citations number
4
Categorie Soggetti
Materials Science, Characterization & Testing
Journal title
Russian journal of nondestructive testing → ACNP
ISSN journal
10618309
Volume
32
Issue
1
Year of publication
1996
Pages
40 - 43
Database
ISI
SICI code
1061-8309(1996)32:1<40:UOGHSL>2.0.ZU;2-1
Abstract
We describe a hot-hole submillimeter laser in which the wavelength is tunable with simultaneous narrow-band emission. The laser is used for inspection and certification of the parameters of narrow-gap semicondu ctor materials.