MEASUREMENT OF THE THICKNESS OF DIELECTRIC THIN-FILMS ON SILICON PHOTODETECTORS USING THE ANGULAR RESPONSE TO INCIDENT LINEARLY POLARIZED-LIGHT

Authors
AZZAM RMA HOWLADER MMK
Citation
Rma. Azzam et Mmk. Howlader, MEASUREMENT OF THE THICKNESS OF DIELECTRIC THIN-FILMS ON SILICON PHOTODETECTORS USING THE ANGULAR RESPONSE TO INCIDENT LINEARLY POLARIZED-LIGHT, IEEE transactions on instrumentation and measurement, 43(6), 1994, pp. 799-802
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
IEEE transactions on instrumentation and measurement → ACNP
ISSN journal
00189456
Volume
43
Issue
6
Year of publication
1994
Pages
799 - 802
Database
ISI
SICI code
0018-9456(1994)43:6<799:MOTTOD>2.0.ZU;2-9
Abstract
A simple and accurate technique for measuring the thickness of dielect ric thin films on solid state photodetectors is described. It is based on the angle-of-incidence-dependent response of the detector to incid ent p(TM)- or s(TE)-polarized monochromatic light. The method is appli ed to determine the thickness of SiO2 films on planar-diffused Si phot odiodes to within +/-1 nm.