DUAL-POLARIZATION, SINGLE-QUANTUM-WELL ALGAINP LASER-DIODE STRUCTURE

Citation
Dp. Bour et al., DUAL-POLARIZATION, SINGLE-QUANTUM-WELL ALGAINP LASER-DIODE STRUCTURE, IEEE journal of quantum electronics, 30(12), 1994, pp. 2738-2742
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
30
Issue
12
Year of publication
1994
Pages
2738 - 2742
Database
ISI
SICI code
0018-9197(1994)30:12<2738:DSALS>2.0.ZU;2-3
Abstract
A single quantum-well Ga0.5+deltaIn0.5-deltaP/(AlGa)(0.5)In0.5P laser structure is demonstrated, which can provide similar gain in both pola rizations, The slightly tensile-strained quantum-well has a light-hole ground state, which gives the lowest transparency current for TM-mode gain, However, the TE-mode gain is dominant at high drive currents, T he gain-current relationships have been characterized for each polariz ation, and found to cross at a modal gain value of 25 cm(-1). Lasers w hose threshold gain is near this crossover value were found to emit in either one or both polarizations, with a very wide range of polarizat ion asymmetry possible, A simple QW gain model can be used to qualitat ively describe this behavior, along with the tendency toward TE-mode e mission at higher temperature.