RESISTIVITY OF POROUS SILICON - A SURFACE EFFECT

Authors
LEHMANN V HOFMANN F MOLLER F GRUNING U
Citation
V. Lehmann et al., RESISTIVITY OF POROUS SILICON - A SURFACE EFFECT, Thin solid films, 255(1-2), 1995, pp. 20-22
Citations number
10
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
255
Issue
1-2
Year of publication
1995
Pages
20 - 22
Database
ISI
SICI code
0040-6090(1995)255:1-2<20:ROPS-A>2.0.ZU;2-G
Abstract
For micro- and mesoporous silicon samples a decrease in conductivity b y several orders of magnitude as compared with the substrate is observ ed. Since the structures in mesoporous silicon are too large to show s ignificant quantum confinement, models for the decreased conduction ba sed on quantum confinement are not applicable. A new model for the cha rge transport mechanism based on constrictions of conductive pathways produced by charged surface traps is proposed and verified in experime nts.