MODULATED PHOTOTHERMAL REFLECTANCE ON POROUS SILICON

In this paper we present for the first time results of the application of the modulated photothermal reflectance technique to porous silicon (PS) samples with various degrees of porosity obtained by means of el ectrochemical dissolution of p(-) and p(+) c-Si substrates. Frequency scans yield results which are strongly related to the thermal conducti vity, carrier lifetime and surface recombination velocity of PS. A mod el accounting for these effects has been developed in order to yield a quantitative evaluation of parameters which are of capital importance in both the physics and technology of PS.