VARIATIONS IN THE LATTICE-PARAMETER OF POROUS SILICON PRODUCED BY WETTING AND VAPOR ADSORPTION

Authors
DOLINO G BELLET D
Citation
G. Dolino et D. Bellet, VARIATIONS IN THE LATTICE-PARAMETER OF POROUS SILICON PRODUCED BY WETTING AND VAPOR ADSORPTION, Thin solid films, 255(1-2), 1995, pp. 132-134
Citations number
16
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
255
Issue
1-2
Year of publication
1995
Pages
132 - 134
Database
ISI
SICI code
0040-6090(1995)255:1-2<132:VITLOP>2.0.ZU;2-J
Abstract
High resolution X-ray measurements of the variations in the lattice pa rameter of p-type porous silicon produced by wetting or vapour adsorpt ion are reported. While pentane wetting produces only a lattice expans ion. pentane vapour adsorption gives a more complex behaviour: with in creasing vapour pressure there is first a lattice contraction, followe d by an expansion. These results are discussed in relation to vapour a dsorption mechanisms.