G. Dolino et D. Bellet, VARIATIONS IN THE LATTICE-PARAMETER OF POROUS SILICON PRODUCED BY WETTING AND VAPOR ADSORPTION, Thin solid films, 255(1-2), 1995, pp. 132-134
High resolution X-ray measurements of the variations in the lattice pa
rameter of p-type porous silicon produced by wetting or vapour adsorpt
ion are reported. While pentane wetting produces only a lattice expans
ion. pentane vapour adsorption gives a more complex behaviour: with in
creasing vapour pressure there is first a lattice contraction, followe
d by an expansion. These results are discussed in relation to vapour a
dsorption mechanisms.