The evolution of mechanical stress in porous silicon films during dryi
ng was investigated. It was found that the dominant factor is capillar
y forces which art responsible for high tensile stresses during drying
, and which lead to damage and destruction of highly porous films. Bef
ore drying, the films are found to be under compression. This can be r
elated to the increased lattice parameter observed in porous silicon.
After drying, the compressive stress is reduced. The difference in str
ess was ascribed to van der Waals forces which lead to attraction betw
een the hydrogen-covered pore surfaces.