SLOW LUMINESCENCE FROM TRAPPED CHARGES IN OXIDIZED POROUS SILICON

Authors
KUX A KOVALEV D KOCH F
Citation
A. Kux et al., SLOW LUMINESCENCE FROM TRAPPED CHARGES IN OXIDIZED POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 143-145
Citations number
11
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
255
Issue
1-2
Year of publication
1995
Pages
143 - 145
Database
ISI
SICI code
0040-6090(1995)255:1-2<143:SLFTCI>2.0.ZU;2-W
Abstract
Porous silicon exhibits a fast (similar to 1 ns) luminescence band in the blue-green (2.3-2.7 eV) spectral region when post-treated by rapid thermal oxidation. In addition we observe for the blue emission a tim e-delayed signal with a typical time constant of order 1 s that indica tes carrier trapping. This component is present at low temperatures an d has a sharp excitation onset at 4.3 eV. Quenching of the slow signal after additional thermal treatment of aged samples is accompanied by changes in the IR spectrum.