Characterization of porous silicon (PS) on the atomic scale is difficu
lt and optical techniques offer certain advantages. High vacuum studie
s of PS by optical second-harmonic generation (SHG) are presented. Exc
itation wavelengths corresponding to a surface state and a suspected s
train resonance from clean Si surfaces are used. Hydrogen-terminated a
nd clean surfaces of Si(100) and PS are compared. The H-terminated sur
faces give no signal under the excitation conditions used. On desorbin
g the hydrogen, a stable SH signal is obtained from the PS which has a
polarization behaviour consistent with a significant contribution fro
m surfaces of {111} orientation.