POROUS SILICON OBTAINED BY ANODIZATION IN THE TRANSITION REGIME

A process is presented based on anodization of silicon in the transiti on region between the porous silicon formation regime and the electrop olishing regime. Bright and stable photoluminescence was obtained on p (-), n(-) and p(+), n(+) (even degenerate) silicon. We report the phot oluminescence, IR absorbance and thermal diffusivity of porous silicon formed by anodizing in the transition regime the four types of silico n. Fourier transform IR and gravimetric investigations showed that ano dic silicon suboxide is formed on the surface. A model is proposed for the porous structure, which is suggested to consist of silicon crysta llites built inside an anodic oxide.