POSITRON LIFETIME SPECTROSCOPY OF N-TYPE AND P-TYPE POROUS SILICON

Authors
DANNEFAER S BRETAGNON T FOUCARAN A TALIERCIO T KERR D
Citation
S. Dannefaer et al., POSITRON LIFETIME SPECTROSCOPY OF N-TYPE AND P-TYPE POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 171-173
Citations number
10
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
255
Issue
1-2
Year of publication
1995
Pages
171 - 173
Database
ISI
SICI code
0040-6090(1995)255:1-2<171:PLSONA>2.0.ZU;2-6
Abstract
Positron lifetime spectroscopy was used to investigate similar to 150 mu m thick porous layers. Very significant positronium formation in th e porous layer was found, amounting to similar to 20% of all positrons . The positronium lifetime is exceptionally high (40-55 ns) which indi cates that the positronium interacts weakly with the pore surfaces. Ag ing of porous silicon can remove completely the positronium response.