STRUCTURAL AND ELASTIC PROPERTIES OF POROUS SILICON

Citation
Cc. Matthai et al., STRUCTURAL AND ELASTIC PROPERTIES OF POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 174-176
Citations number
9
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
255
Issue
1-2
Year of publication
1995
Pages
174 - 176
Database
ISI
SICI code
0040-6090(1995)255:1-2<174:SAEPOP>2.0.ZU;2-Z
Abstract
We have implemented a modified diffusion-limited aggregation model to simulate the porous silicon structure obtained by electrochemical diss olution. The resulting fractal structures were fully equilibrated usin g the molecular dynamics method. An analysis of the relaxed structure shows it to be quite stable with the presence of one-, two- and three- coordinated atoms as well as the four-coordinated atoms found in bulk silicon. It is suggested that the different substructures or nanocryst als might be responsible for the observed photoluminescence.