DEPTH PROFILING OF POROUS SILICON LAYERS BY ATTENUATED TOTAL-REFLECTION SPECTROSCOPY

Authors
THEISS W WERNKE M OFFERMANN V
Citation
W. Theiss et al., DEPTH PROFILING OF POROUS SILICON LAYERS BY ATTENUATED TOTAL-REFLECTION SPECTROSCOPY, Thin solid films, 255(1-2), 1995, pp. 181-184
Citations number
11
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
255
Issue
1-2
Year of publication
1995
Pages
181 - 184
Database
ISI
SICI code
0040-6090(1995)255:1-2<181:DPOPSL>2.0.ZU;2-3
Abstract
Attenuated total reflection spectroscopy is presented as a non-destruc tive analytical tool to investigate porous silicon layers. It is shown how depth-dependent information on the chemical composition of the la yers can be obtained by performing reflectance measurements at various angles of incidence and doing careful parameter fits in suitable mode ls for the concentration of impurities such as oxygen and hydrogen. Re sults for samples treated by laser radiation during etching are shown.