EXCITATION MECHANISM OF POROUS SILICON LUMINESCENCE - THE ROLE OF SENSITIZERS

Authors
BUYANOVA IA KORSUNSKAYA NE SAVCHUK AU SHEINKMAN MK VONBARDELEBEN HJ
Citation
Ia. Buyanova et al., EXCITATION MECHANISM OF POROUS SILICON LUMINESCENCE - THE ROLE OF SENSITIZERS, Thin solid films, 255(1-2), 1995, pp. 185-187
Citations number
14
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
255
Issue
1-2
Year of publication
1995
Pages
185 - 187
Database
ISI
SICI code
0040-6090(1995)255:1-2<185:EMOPSL>2.0.ZU;2-7
Abstract
The correlation of the photoluminescence and photoluminescence excitat ion spectra of porous silicon in the as-prepared, etched and low-tempe rature annealed states are studied. The results obtained are explained within the model of photoluminescence excitation by surface sensitize rs and subsequent transfer of the excitation to the porous silicon.