Light-emitting porous silicon (PS) layers prepared by anodic oxidation
on p-substrates have been studied by micro-Raman scattering and micro
photoluminescence spectroscopy simultaneously. A complementary study b
y transmission electron microscopy has been made. A change in microsco
pic structure with depth is observed as well as a red shift of the lum
inescence as the focalized laser beam approaches the bulk substrate. T
his result pointed out a correlation between the structural depth inho
mogeneity and optical properties of porous silicon in agreement with q
uantum size effects.