ANOMALOUS LUMINESCENCE DEGRADATION BEHAVIOR OF CHEMICALLY OXIDIZED POROUS SILICON

Citation
R. Czaputa et al., ANOMALOUS LUMINESCENCE DEGRADATION BEHAVIOR OF CHEMICALLY OXIDIZED POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 212-215
Citations number
8
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
255
Issue
1-2
Year of publication
1995
Pages
212 - 215
Database
ISI
SICI code
0040-6090(1995)255:1-2<212:ALDBOC>2.0.ZU;2-A
Abstract
For nanoporous silicon treated with nitric acid, a remarkable photolum inescence enhancement effect is observed. The enhancement is controlle d by irradiation with visible light. Photoluminescence. infrared spect roscopy and electron spin resonance are used to compare tile material, modified by nitric acid with as-prepared porous silicon and oxidized by irradiation in air. Characteristic changes in the infrared spectrum during the enhancement indicate that an unidentified hydrogen source, activated by light, could terminate the surface dangling bond centres formed by the HNO3 oxidation process.