INFLUENCE OF RAPID THERMAL-OXIDATION ON DIFFERENTLY PREPARED POROUS SILICON

Experiments with rapidly thermally oxidized porous silicon are present ed. The samples are prepared from differently doped wafers (n-type and p-type) under various illumination conditions (dark, visual Light, UV light). Rapid thermal oxidation is performed using temperatures from 700 degrees C to 1200 degrees C. We describe the photoluminescence and the electroluminescence of the samples.The light-assisted samples sho w bright photoluminescence after etching, which is decreased by oxidat ion. On the other hand, the p-type samples etched in the dark show wea k luminescence which increases with oxidation. All freshly oxidized sa mples show a PL energy below 1.7 eV. When these samples are hydrogen p assivated after an HF dip, they show energies above 1.7 eV. The experi ments can be explained using a smart quantum confinement model.