A simple chemical etching of silicon substrates in NaNO2-HF solutions
allows us to obtain homogeneously luminescent surfaces when these subs
trates are mechanically abraded by sand blasting. A comparative study
of porous silicon prepared from non-abraded and sand-blasted wafers by
IR spectrometry and thermal desorption spectrometry experiments is pe
rformed vs. etching time. The hydrogen concentration is eight times hi
gher in sand-blasted wafers and the configurations of the Si-H bonds a
re different.