HOMOGENEOUS CHEMICAL ETCHING OF SAND-BLASTED SILICON SUBSTRATES

Citation
M. Vergnat et al., HOMOGENEOUS CHEMICAL ETCHING OF SAND-BLASTED SILICON SUBSTRATES, Thin solid films, 255(1-2), 1995, pp. 231-233
Citations number
9
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
255
Issue
1-2
Year of publication
1995
Pages
231 - 233
Database
ISI
SICI code
0040-6090(1995)255:1-2<231:HCEOSS>2.0.ZU;2-7
Abstract
A simple chemical etching of silicon substrates in NaNO2-HF solutions allows us to obtain homogeneously luminescent surfaces when these subs trates are mechanically abraded by sand blasting. A comparative study of porous silicon prepared from non-abraded and sand-blasted wafers by IR spectrometry and thermal desorption spectrometry experiments is pe rformed vs. etching time. The hydrogen concentration is eight times hi gher in sand-blasted wafers and the configurations of the Si-H bonds a re different.