THE RELATION BETWEEN THE VISIBLE AND THE INFRARED LUMINESCENCE BANDS IN POROUS SILICON - COMPARISON WITH AMORPHOUS SI ALLOYS

Authors
PETROVAKOCH V MUSCHIK T
Citation
V. Petrovakoch et T. Muschik, THE RELATION BETWEEN THE VISIBLE AND THE INFRARED LUMINESCENCE BANDS IN POROUS SILICON - COMPARISON WITH AMORPHOUS SI ALLOYS, Thin solid films, 255(1-2), 1995, pp. 246-249
Citations number
28
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
255
Issue
1-2
Year of publication
1995
Pages
246 - 249
Database
ISI
SICI code
0040-6090(1995)255:1-2<246:TRBTVA>2.0.ZU;2-I
Abstract
The energy positions of the visible and the infrared luminescence band s in porous Si are related. Their dependence on different parameters i s examined. They are both blue-shifted (from 1.0 eV to 2.1 eV for the visible and from 0.8 eV to 1.3 eV for the infrared band) due to a redu ced crystallite size. However, the visible band can be red-shifted by up to 300 meV by surface effects. The observed behaviour is characteri stic of neither pure quantum systems nor amorphous alloys. It is typic al for porous Si containing surface slates.