ELECTRONIC-PROPERTIES AND SCHOTTKY-BARRIER OF THE POROUS SILICON - AUINTERFACE

We investigated the electrical properties of porous silicon layers pre pared on one side of a silicon single-crystal wafer and sandwiched wit h it between two 25 nm thick Au films. When a sum of a constant bias v oltage and a voltage pulse are applied over this structure it behaves like a capacitor, with the capacitance decreasing with increasing bias voltage, This phenomenon is attributed to interface defects between t he Au film and porous silicon. characterized by a Schottky barrier hei ght of 1.2 eV.