The aim of this study was to explore the possible applications of poro
us SiGe material in photoluminescence and electroluminescence procedur
es. The SiGe alloy ingots were produced using the Polix method, Ge bei
ng doped with boron. The SiGe plates were etched by anodization. The p
orous structures were irradiated by the 514.5 nm line of a continuous
wave argon laser, showing visible luminescence around 0.75 mu m.