LIGHT-EMISSION FROM RECRYSTALLIZED AMORPHOUS SI MQW STRUCTURES

Authors
STEIGMEIER EF GRUTZMACHER D AUDERSET H MORF R DELLEY B WESSICKEN R
Citation
Ef. Steigmeier et al., LIGHT-EMISSION FROM RECRYSTALLIZED AMORPHOUS SI MQW STRUCTURES, Thin solid films, 255(1-2), 1995, pp. 295-297
Citations number
5
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
255
Issue
1-2
Year of publication
1995
Pages
295 - 297
Database
ISI
SICI code
0040-6090(1995)255:1-2<295:LFRASM>2.0.ZU;2-J
Abstract
Visible light emission is observed on laser recrystallised amorphous m ulti-quantum-well layers. In addition to the 620 nm peak observed in p revious work, an intense photoluminescence peak is found in the 470 nm to 550 nm range. While we assign the former to a surface state of hig h recombination efficiency, the latter shows properties expected for a quantum confinement effect.