P-WELLS MADE OF POROUS SILICON FOR POWER DEVICES - DETERMINATION OF THE FORMATION STEPS

Authors
DEHU P SENES A MISEREY F
Citation
P. Dehu et al., P-WELLS MADE OF POROUS SILICON FOR POWER DEVICES - DETERMINATION OF THE FORMATION STEPS, Thin solid films, 255(1-2), 1995, pp. 321-324
Citations number
6
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
255
Issue
1-2
Year of publication
1995
Pages
321 - 324
Database
ISI
SICI code
0040-6090(1995)255:1-2<321:PMOPSF>2.0.ZU;2-Y
Abstract
Porous silicon is formed in N- substrates. The porous layers are about 150 mu m thick. A method to localize these porous areas is defined. T hese technological results should allow the achievement of diffused we lls made of porous silicon. Such wells are thought to considerably imp rove the performances of symmetrical sustaining voltage power devices.