ION-BEAM-INDUCED ELECTRICAL-CONDUCTIVITY IN PLASMA-POLYMERIZED ANILINE FILM

Plasma-polymerized organic films starting from aniline have been prepa red. Characteristics of the films have been examined in detail using F T-IR, X-ray photoelectron spectroscopy (XPS), near-IR to UV spectrosco py and nuclear analysis techniques. While irradiation by 100 keV Ar+ i ons at high fluence induces electrical conduction due to damage, dopin g of the plasma-polymerized aniline film with 24 keV I+ implantation a t a fluence of 1 x 10(16) ions/cm2 results in a decrease of electrical resistivity by twelve orders of magnitude. A threshold-like dependenc e of resistivity on the ion fluence has been found for the plasma-poly merized film irradiated by 100 keV Ar+ ions, similar to conventional p olymers.