SPECTROSCOPIC MEASUREMENTS OF RESIDUAL IMPURITIES IN SILICON AND APPLICATION TO THE MEASUREMENT OF LOCAL LATTICE DISTORTION

The physical methods used to analyse the residual impurities in non-do ped float-zoned silicon are presented with an emphasis on low-temperat ure spectroscopy. photoluminescence and absorption spectra of residual impurities in high-purity materials illustrate the possibilities of s pectroscopic techniques. The hydrostatic expansion of the Si lattice d ue to a high concentration of interstitial O (O-i) can be probed by th e stress-induced shift of C-related lines relative to the position in O-i-lean material. Values of the volume change near the P and As atoms , which are residual impurities in Si, can be obtained from the electr onic spectra; the method used is outlined and the results compared wit h theoretical calculations.