SILICON-ON-INSULATOR TECHNOLOGY FOR HIGH-TEMPERATURE METAL-OXIDE-SEMICONDUCTOR DEVICES AND CIRCUITS

Authors
FLANDRE D
Citation
D. Flandre, SILICON-ON-INSULATOR TECHNOLOGY FOR HIGH-TEMPERATURE METAL-OXIDE-SEMICONDUCTOR DEVICES AND CIRCUITS, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 7-12
Citations number
22
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
29
Issue
1-3
Year of publication
1995
Pages
7 - 12
Database
ISI
SICI code
0921-5107(1995)29:1-3<7:STFHM>2.0.ZU;2-3
Abstract
The high temperature characteristics of devices and circuits realized in complementary metal oxide semiconductor (CMOS) technology on silico n-on-insulator (SOI) substrates are compared with other materials, and it is demonstrated that CMOS on SOI is presently the most suitable pr ocess for the realization of electronic circuits operating at up to mo re than 300 degrees C.