TUNGSTEN METALLIZATION TECHNOLOGY FOR HIGH-TEMPERATURE SILICON-ON-INSULATOR DEVICES

Authors
CHEN J COLINGE JP
Citation
J. Chen et Jp. Colinge, TUNGSTEN METALLIZATION TECHNOLOGY FOR HIGH-TEMPERATURE SILICON-ON-INSULATOR DEVICES, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 18-20
Citations number
11
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
29
Issue
1-3
Year of publication
1995
Pages
18 - 20
Database
ISI
SICI code
0921-5107(1995)29:1-3<18:TMTFHS>2.0.ZU;2-N
Abstract
Tungsten metallization technology has been developed for high temperat ure silicon-on-insulator devices and circuits. The experiments on tung sten evaporation, plasma etching, annealing and lift-off process for t he contact pad will be described in detail. Contact resistances were m easured and compared with that of an aluminum metallization system. No significant degradation was observed by static measurement from room temperature up to 320 degrees C.